BF1216,115

BF1216,115

$0.69
  • Description:RF MOSFET 5V 6TSSOP
  • Series:-

SKU:9bf68d54cff4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 5V 6TSSOP
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:400MHz
  • Gain:30dB
  • Voltage - Test:5 V
  • Current Rating (Amps):30mA
  • Noise Figure:1dB
  • Current - Test:19 mA
  • Power - Output:-
  • Voltage - Rated:6 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Configuration:N-Channel Dual Gate

Download product information

BF1216,115

Overview

The BF1216 is a dual N-channel dual-gate MOSFET containing two low-noise gain-controlled amplifiers within a single SOT363 package. It features shared source and gate2 leads with internal bias circuits for DC stabilization. The device supports VHF and UHF applications on a 5 V supply, offering high forward transfer admittance and superior cross-modulation performance during automatic gain control.

Feature Summary

  • Combines two low-noise gain-controlled amplifiers in a single micro-miniature plastic package
  • Features partly integrated bias circuits enabling DC stabilization
  • Provides superior cross-modulation performance during automatic gain control operation
  • Includes integrated diodes between gates and source to protect against excessive input voltage surges

Applications

  • Gain controlled low noise amplifiers for VHF and UHF applications running on a 5 V supply voltage
  • Digital and analog television tuners
  • Professional communication equipment

Procurement Notes

Verify the specific ordering suffix when sourcing components. The base part number BF1216 corresponds to the standard plastic surface-mounted package. Confirm that the received units match the exact marking codes (M5p, M5t, or M5w) documented in the datasheet to ensure authenticity and correct manufacturing origin. Always consult the most recent product data sheet before initiating design.

Selection Notes

Select this component for designs requiring compact integration of dual RF amplifiers with shared control lines. The SOT363 package minimizes board space while maintaining thermal performance up to 180 mW dissipation. Ensure the application operates within the 6 V drain-source voltage limit and utilizes the 5 V supply configuration for optimal noise figure and gain characteristics in VHF/UHF bands.

Part Context

This device belongs to the family of dual-gate MOSFETs designed for radio frequency signal processing. Unlike single-transistor solutions, it integrates two distinct amplifier channels (Amplifier A and B) that share common gate2 and source terminals. This architecture simplifies circuit topology for balanced or differential RF front-end stages in consumer electronics and professional communications hardware.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

BF1216,115BF1216,115
$0.69
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