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The BF1216 is a dual N-channel dual-gate MOSFET containing two low-noise gain-controlled amplifiers within a single SOT363 package. It features shared source and gate2 leads with internal bias circuits for DC stabilization. The device supports VHF and UHF applications on a 5 V supply, offering high forward transfer admittance and superior cross-modulation performance during automatic gain control.
Verify the specific ordering suffix when sourcing components. The base part number BF1216 corresponds to the standard plastic surface-mounted package. Confirm that the received units match the exact marking codes (M5p, M5t, or M5w) documented in the datasheet to ensure authenticity and correct manufacturing origin. Always consult the most recent product data sheet before initiating design.
Select this component for designs requiring compact integration of dual RF amplifiers with shared control lines. The SOT363 package minimizes board space while maintaining thermal performance up to 180 mW dissipation. Ensure the application operates within the 6 V drain-source voltage limit and utilizes the 5 V supply configuration for optimal noise figure and gain characteristics in VHF/UHF bands.
This device belongs to the family of dual-gate MOSFETs designed for radio frequency signal processing. Unlike single-transistor solutions, it integrates two distinct amplifier channels (Amplifier A and B) that share common gate2 and source terminals. This architecture simplifies circuit topology for balanced or differential RF front-end stages in consumer electronics and professional communications hardware.
No public confirmed substitute part numbers are available in the provided documentation.