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Product Detailed Parameters
- Description：RF TRANS NPN 25V 1.1GHZ TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：1.1GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：38 @ 7mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The BF199 is an NPN silicon RF transistor designed for medium frequency applications, housed in a TO-92 plastic package. It features a collector-emitter voltage of 25 V and a continuous collector current rating of 50 mA. The device exhibits a current gain bandwidth product of 1100 MHz at 100 MHz test frequency. Key electrical characteristics include a DC current gain (hFE) of 38 minimum at 7.0 mA collector current. Thermal performance specifies a total device dissipation of 350 mW at 25°C ambient temperature with a junction-to-ambient thermal resistance of 357 °C/W.
Feature Summary
- Optimized for low current and low voltage RF signal processing
- High-frequency operation capability suitable for vision IF amplifiers
Applications
- Output stage of a vision IF amplifier
- RF small signal amplification circuits
- Medium frequency transistor applications
Procurement Notes
Verify the manufacturer origin as datasheets are available from multiple vendors including Fairchild Semiconductor and NXP. Confirm RoHS compliance status as historical data indicates non-compliance for some versions. Ensure the specific ordering suffix matches the required pinout configuration for the TO-92 package before integration into production designs.
Selection Notes
Select this component for designs requiring high-frequency response up to the VHF band with low power consumption constraints. Evaluate the 50 mA continuous current limit against peak load requirements. Consider the TO-92 package size for space-constrained PCB layouts where surface-mount alternatives are not feasible.
Part Context
This component belongs to the family of NPN medium frequency transistors used primarily in analog RF front-end stages. It serves as a discrete solution for signal mixing and amplification in legacy and specialized communication equipment. The part is widely recognized for its stability in low-noise oscillator and mixer configurations.
Replacement Considerations
Direct substitutes include the BF240 and BF840 NPN medium frequency transistors which share similar package and functional profiles. Verify pin compatibility and electrical parameter margins when cross-referencing with other manufacturers' equivalents.
