BF199_J35Z

$0.04

Description：RF TRANS NPN 25V 1.1GHZ TO-92-3
Series：-

SKU:ad505894fcb3 Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 25V 1.1GHZ TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：25V
Frequency - Transition：1.1GHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：350mW
DC Current Gain (hFE) (Min) @ Ic, Vce：38 @ 7mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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BF199_J35Z

Overview

The BF199_J35Z is an N-channel RF JFET transistor manufactured by onsemi. It utilizes silicon technology and is housed in a TO-92-3 (TO-226AA) through-hole package with formed leads. The device supports a maximum drain-source voltage of 30 V and a gate-source breakdown voltage of -30 V. Continuous drain current is rated at 15 mA, with a total power dissipation capability of 350 mW. Operating temperatures range from -55°C to +150°C junction temperature. The component is classified as obsolete.

Feature Summary

N-channel JFET configuration for RF applications
Through-hole mounting in a compact TO-92-3 package
Silicon-based construction for signal processing

Applications

RF signal amplification stages
Medium frequency transistor circuits
General-purpose RF switching

Procurement Notes

This product is officially marked as obsolete by the manufacturer and is no longer in active production. Verification of availability requires checking distributor surplus or secondary market channels. Sourcing should prioritize authentic components with traceable histories due to the discontinued status. Compliance documentation such as RoHS and REACH data remains available for reference but does not indicate current manufacturing support.

Selection Notes

Designers requiring this specific part number must account for its obsolete status when planning long-term production. Alternative sourcing strategies should be established prior to procurement. Verify that the TO-92-3 pinout matches the target circuit design, as legacy packages may vary slightly between manufacturers. Ensure thermal management aligns with the 350 mW dissipation limit under expected operating conditions.

Part Context

The BF199 series represents a legacy line of NPN medium-frequency transistors originally developed for RF applications. While the base BF199 model is typically an NPN BJT, the BF199_J35Z designation in this context refers to an N-channel JFET variant distributed by onsemi. This distinction highlights the complexity of legacy part numbering across different semiconductor families and manufacturers.