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Product Detailed Parameters
- Description：RF MOSFET JFET 15V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：JFET
- Frequency：100MHz
- Gain：-
- Voltage - Test：15 V
- Current Rating (Amps)：50mA
- Noise Figure：1.5dB
- Current - Test：-
- Power - Output：-
- Voltage - Rated：30 V
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Configuration：N-Channel
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Overview
The BF244C_J35Z is an N-channel RF JFET transistor manufactured by onsemi. It utilizes silicon technology and is housed in a SOT-23 surface-mount package. The device features a gate-source breakdown voltage of 30 V and a maximum drain-gate voltage of 30 V. Continuous drain current is rated at 25 mA, with power dissipation limited to 350 mW. Forward transconductance ranges from 0.003 S to 0.0065 S. Operating temperatures span from -55 C to +150 C.
Feature Summary
- Designed for radio frequency amplifier applications using N-channel JFET technology.
- Utilizes silicon construction for reliable performance in single-configuration setups.
Applications
- RF amplifier circuits
- Radio frequency signal processing
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via the latest datasheet documentation. Check for product lifecycle changes as this item may be subject to discontinuation notices. Ensure storage conditions align with specified temperature limits to maintain device integrity prior to assembly.
Selection Notes
Select this component for designs requiring an N-channel RF JFET in a compact SOT-23 footprint. Verify that the 30 V voltage ratings and 25 mA current limits meet circuit requirements. Consider the forward transconductance range for gain specifications. Ensure thermal management supports the 350 mW power dissipation capability within the operating temperature range.
Part Context
This part belongs to the RF JFET Transistors category under onsemi's discrete semiconductor portfolio. It represents a silicon-based solution for high-frequency applications. The J35Z suffix typically denotes specific binning or packaging variations within the manufacturer's standard nomenclature system for this device family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation for potential cross-references or updated replacement recommendations due to the component's discontinued status.
