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The BF245A is an N-channel silicon junction field-effect transistor (JFET) designed for VHF and UHF amplifier applications. It operates in depletion mode with a TO-92 plastic package. Key electrical parameters include a drain-gate voltage of 30 V, a gate-source voltage of -30 V, and a total device dissipation of 350 mW at 25°C. The zero-gate voltage drain current ranges from 2 to 6.5 mA, while the gate-source cut-off voltage spans -0.4 V to -1.6 V. Common source forward transconductance is specified between 3 and 6.5 mmhos at 1 kHz.
Verify manufacturer origin as Fairchild Semiconductor or authorized successors like onsemi. Confirm package marking matches TO-92 standards. Check datasheet revision history for parameter updates. Ensure component authenticity through authorized distribution channels only.
Select based on required gain and frequency range within VHF/UHF bands. Compare IDSS and VGS(off) tolerances against circuit biasing requirements. Consider thermal derating above 25°C when calculating power dissipation limits for the specific application environment.
Part of the BF245 series including BF245B and BF245C variants. These devices share identical pinouts and general structure but differ in electrical parameter bins such as drain current and cutoff voltage thresholds to suit different amplification needs.
BF245B, BF245C
The operating and storage junction temperature range is -55°C to +150°C.
It is housed in a TO-92 plastic package with three pins: Gate, Source, and Drain.
It is designed primarily for use in VHF and UHF amplifiers.