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Product Detailed Parameters
- Description：JFET N-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：30 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：600 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The BF246A is an N-channel silicon junction field-effect transistor (JFET) manufactured by Fairchild Semiconductor, now part of onsemi. It is housed in a TO-92 plastic package and designed primarily for electronic switching applications such as low on-resistance analog switching. The device features interchangeable drain and source connections and supports frequencies up to 450 MHz. Key electrical characteristics include a gate-source breakdown voltage of -30 V, a zero-gate voltage drain current range of 30 mA to 80 mA, and a forward transfer conductance of 8 mS at VDS = 15V and VGS = 0V.
Feature Summary
- Designed for low on-resistance analog switching applications
- Interchangeable drain and source connections
- Supports operation up to 450 MHz
Applications
- VHF and UHF amplifiers
- Mixers
- General purpose switching
Procurement Notes
Verify the manufacturer origin carefully, as the BF246A was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the specific datasheet revision and process source (e.g., Process 51) if historical consistency is required for legacy designs. Check for RoHS compliance status relative to the production date, as older stock may differ from current manufacturing standards.
Selection Notes
Select this component when a symmetrical N-channel JFET with interchangeable terminals is required for analog switching or RF applications. Ensure the design accommodates the specified gate-source breakdown voltage of -30 V and the total device dissipation limits. Consider the thermal resistance values for proper heat management in enclosed environments.
Part Context
The BF246A belongs to the family of general-purpose N-channel junction field-effect transistors. It shares functional similarities with other devices like the BF246 and BF245 series, often used in VHF/UHF circuits. The interchangeable terminal design simplifies PCB layout and circuit topology flexibility compared to non-symmetrical FETs.
Replacement Considerations
Direct substitutes may include the BF246 or BF245 series from various manufacturers. Verify pinout compatibility and electrical parameters such as IDSS range and V(BR)GSS. Cross-reference with other N-channel JFETs offering similar frequency response and switching characteristics.
