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Product Detailed Parameters
- Description：JFET N-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：30 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：600 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The BF246A_J35Z is an obsolete N-channel RF JFET transistor manufactured by onsemi. It utilizes a TO-92-3 (TO-226AA) through-hole package and operates with a maximum drain-source voltage of 30 V and a gate-source breakdown voltage of -30 V. The device supports a continuous drain current of 15 mA and features a total power dissipation rating of 350 mW at 25°C ambient temperature, derating by 2.8 mW/°C above this threshold. It functions as a depletion-mode single transistor with a junction temperature range up to 150°C.
Feature Summary
- N-channel depletion mode RF JFET technology for high-frequency signal processing
- Through-hole TO-92-3 package configuration for standard mounting
- High junction temperature capability supporting robust thermal operation
Applications
- UHF band amplifier circuits
- RF signal processing stages
- Small-signal amplification applications
Procurement Notes
This component is officially classified as obsolete and no longer manufactured by onsemi. Verification of availability requires checking authorized distributors for remaining stock or approved parameter-equivalent alternatives. Ensure that any substitute part matches the original electrical specifications and pinout configuration to maintain circuit integrity without requiring design modifications.
Selection Notes
Selection should prioritize N-channel RF JFETs with identical 30 V voltage ratings and TO-92-3 packaging. Verify that replacement devices meet the same 15 mA drain current and 350 mW power dissipation requirements. Confirm that the alternative maintains comparable transconductance and noise figure characteristics suitable for UHF frequency operations to ensure functional equivalence in existing designs.
Part Context
The BF246A belongs to the BF24x series of N-channel depletion-mode JFETs designed for radio frequency applications. This series typically includes variants such as BF244 and BF245, which share similar structural characteristics but may differ in specific gain groupings or frequency response parameters. The J35Z suffix indicates a specific tape-and-reel packaging format used for automated assembly processes.
Replacement Considerations
Publicly confirmed parameter-equivalent substitutes include the BF245B_J35Z from onsemi. Other potential replacements within the BF24x family should be evaluated based on matching voltage, current, and package constraints. Cross-compatibility must be verified against the specific application's frequency and gain requirements.
