BF247A_J35Z

$0.06

Description：JFET N-CH 25V TO92-3
Series：-

SKU:97051514e63c Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 25V TO92-3
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：25 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：30 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：600 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：-
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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BF247A_J35Z

Overview

The BF247A_J35Z is an N-channel RF JFET transistor manufactured by onsemi. It utilizes silicon technology and features a TO-92-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 25 V, a gate-source breakdown voltage (Vgs) of 30 V, and a continuous drain current (Id) of 15 mA. The device has a maximum power dissipation (Pd) of 350 mW and operates within a temperature range of -55°C to +150°C.

Feature Summary

N-channel RF junction field-effect transistor construction
Silicon-based semiconductor technology
Through-hole mounting capability in a TO-92-3 case outline

Applications

RF amplifier circuits
Low-noise signal processing stages
High-frequency oscillator designs

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix matches design requirements for pinout and electrical characteristics. Check availability status as distribution channels may vary. Ensure handling procedures comply with electrostatic discharge protocols during assembly.

Selection Notes

Select this component for applications requiring low-noise RF performance in a compact through-hole form factor. Evaluate thermal management needs against the 350 mW dissipation limit. Compare noise figures and gain specifications against alternative JFETs to ensure compatibility with system sensitivity requirements and impedance matching networks.

Part Context

This part belongs to onsemi's standard discrete transistor portfolio, specifically within the radio frequency JFET category. It shares the TO-92-3 mechanical footprint common to many small-signal transistors but differs electrically from general-purpose BJTs or MOSFETs. The product line targets high-frequency analog circuit design rather than digital switching or power regulation tasks.