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The BF5030WE6327HTSA1 is a silicon N-channel MOSFET tetrode designed for UHF and VHF tuner input stages with AGC functionality. It supports 5 V and power-saving 3 V operations, featuring integrated ESD gate protection diodes. The device operates in the SOT-343 surface-mount package with four pins. Key electrical parameters include an 8 V drain-source voltage (VDS), 25 mA continuous drain current (ID), and 200 mW total power dissipation at specified temperatures. At 800 MHz, it delivers a typical power gain of 24 dB with a noise figure of 1.3 dB.
Verify component authenticity by checking markings against official datasheet specifications. Confirm package type matches SOT-343 requirements. Ensure handling precautions are followed due to ESD sensitivity. Validate RoHS compliance status through manufacturer documentation before integration into production lines.
Select this component when designing low-noise RF front-ends operating within UHF/VHF bands. Consider its 8 V maximum rating and 25 mA current limit for circuit constraints. Evaluate thermal performance based on ambient temperature conditions relative to the 200 mW dissipation limit. Verify compatibility with existing AGC control voltages.
This part belongs to the BF5030 series of silicon N-channel MOSFET tetrodes from Infineon Technologies. The 'W' suffix indicates the SOT-343 package variant. Other variants include BF5030 (SOT143) and BF5030R (SOT143R). All share similar electrical characteristics but differ in physical packaging dimensions.
Direct substitutes include BF5030 (SOT143) and BF5030R (SOT143R) if package changes are acceptable. Cross-compatibility requires verifying pinout alignment and ensuring thermal resistance values match board layout constraints. No other direct functional equivalents are officially documented.