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The BF771E6327HTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 12V and a continuous collector current of 80mA. The device supports a maximum power dissipation of 580mW and is housed in a compact SOT-23-3 surface-mount package. This component is qualified to the AEC-Q100 automotive standard, ensuring reliability for demanding environments. The part belongs to the BF771 series and utilizes standard Si technology for RF applications.
Verify the specific ordering suffix HTSA1 to ensure correct reel packaging configuration. Confirm that the AEC-Q100 qualification aligns with target automotive system requirements. Check official discontinuation notifications as the product lifecycle status indicates end-of-life planning. Validate RoHS compliance documentation prior to integration into final assemblies.
Select this component when an NPN RF transistor with 12V breakdown and 80mA current capability is required. Ensure the design accommodates the 580mW thermal dissipation limit within the SOT-23-3 footprint. Consider the AEC-Q100 qualification if the application targets automotive electronics rather than general consumer devices.
This part is a variant within the BF771 series of RF transistors from Infineon. The E6327 suffix denotes specific manufacturing and packaging attributes. It serves as a discrete solution for RF front-end modules where small form factor and automotive reliability are prioritized over high-power handling capabilities found in larger packages.
Consult official Infineon substitution guides for direct replacements. Verify pinout compatibility and electrical parameter margins before swapping with other NPN RF transistors in the SOT-23 package family.