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Product Detailed Parameters
- Description：RF TRANS NPN 12V 8GHZ PG-SOT-23
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain：15dB
- Power - Max：580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 30mA, 8V
- Current - Collector (Ic) (Max)：80mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23-3-4
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BF771E6765N is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 12 GHz with a collector-emitter voltage (VCEO) of 12 V and an emitter-base voltage (VEBO) of 3 V. The device supports a continuous collector current of 80 mA and dissipates up to 580 mW of power. Designed for surface-mount applications, it utilizes the SOT-23-3 package configuration. The component functions as a single-transistor RF amplifier suitable for high-frequency signal processing within specified thermal limits.
Feature Summary
- Optimized for radio frequency amplification in compact wireless modules
- High transition frequency capability supporting 12 GHz operation
- Robust thermal performance with 580 mW power dissipation rating
Applications
- RF front-end stages in mobile communication devices
- Low-noise amplification in wireless sensor networks
- Signal conditioning in ISM band transceivers
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm pinout compatibility and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product qualification reports before integration into regulated assemblies.
Selection Notes
Evaluate the 12 V collector-emitter breakdown voltage against circuit supply rails to ensure safe operating area margins. Compare the 80 mA continuous current limit with peak load requirements to prevent thermal runaway during high-duty-cycle transmission phases.
Part Context
This component belongs to the BF771 series of RF bipolar transistors designed for high-frequency analog applications. The series provides standardized performance metrics for designers requiring consistent gain and noise characteristics across multiple production batches.
Replacement Considerations
Cross-reference with BF771E6327HTSA1 for similar SOT-23-3 form factors. Verify electrical parameter alignment and pin assignment compatibility before substituting in existing PCB layouts.
