BF799E6327HTSA1

Description：RF TRANS NPN 20V 800MHZ PG-SOT23
Series：-

SKU:d7c0ef3fabd1 Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 20V 800MHZ PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：20V
Frequency - Transition：800MHz
Noise Figure (dB Typ @ f)：3dB @ 100MHz
Gain：-
Power - Max：280mW
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 20mA, 10V
Current - Collector (Ic) (Max)：35mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

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BF799E6327HTSA1

Overview

The BF799E6327HTSA1 is an NPN silicon RF transistor manufactured by Infineon Technologies, designed for linear broadband amplification applications. It features a transition frequency (fT) ranging from 800 MHz to 1100 MHz and supports operation up to 500 MHz. Key electrical parameters include a collector-emitter voltage (VCEO) of 20 V, a maximum collector current of 35 mA, and a power dissipation rating of 280 mW. The device is housed in a surface-mount PG-SOT23 package.

Feature Summary

Optimized for linear broadband amplification tasks within radio frequency circuits
High transition frequency capability supporting wideband signal processing
Engineered for surface-mount integration using the PG-SOT23 form factor

Applications

Linear broadband amplification in RF systems
Wideband signal processing circuits
Radio frequency amplifier stages

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix matches the required PG-SOT23 package variant. Ensure compliance with RoHS directives and check for AEC-Q100 qualification if automotive reliability standards are mandated for the target application environment.

Selection Notes

Select this component when high linearity and broad bandwidth are critical requirements for RF signal amplification. The 20 V voltage rating and 35 mA current limit define the operational boundaries for low-power RF stages. Consider the thermal management capabilities provided by the 280 mW dissipation rating relative to the PCB layout constraints.

Part Context

This part belongs to Infineon's portfolio of silicon RF transistors intended for communication and signal processing hardware. It serves as a specialized active component for maintaining signal integrity in broadband environments where standard general-purpose transistors lack sufficient frequency response characteristics.