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The BF799WE6327BTSA1 is a small signal N-channel depletion mode MOSFET manufactured by Infineon Technologies. It is housed in the SOT-323 surface-mount package, designated as PG-SOT323-3. The device features a maximum drain-source breakdown voltage of 50V and a continuous drain current rating of 100mA. Key electrical characteristics include a typical gate threshold voltage range between -0.4V and -1.8V, ensuring reliable switching behavior. The component is RoHS compliant and lead-free, suitable for automated assembly processes with a peak reflow temperature of 260°C.
Verify the specific ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the procurement channel provides genuine components with traceable manufacturing data. Check for any specific handling requirements related to moisture sensitivity level classification during storage and soldering.
Select this component when a normally-on N-channel configuration is required within a compact footprint. Evaluate the 50V breakdown voltage and 100mA current limits against circuit load requirements. Consider the negative gate threshold voltage characteristics for biasing network design and logic interface compatibility.
This component belongs to Infineon's general-purpose transistor portfolio, specifically within the depletion mode MOSFET category. It complements enhancement mode devices by offering alternative switching topologies. The SOT-323 packaging aligns with industry standards for high-density surface mount technology implementations.
Cross-reference with other depletion mode MOSFETs in the SOT-323 package from various manufacturers. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure thermal and voltage ratings meet or exceed original design specifications.