BF799WE6327BTSA1

BF799WE6327BTSA1

  • Description:RF TRANS NPN 20V 800MHZ PGSOT323
  • Series:-

SKU:dc03633eff6e Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 20V 800MHZ PGSOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:800MHz
  • Noise Figure (dB Typ @ f):3dB @ 100MHz
  • Gain:-
  • Power - Max:280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

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BF799WE6327BTSA1

Overview

The BF799WE6327BTSA1 is a small signal N-channel depletion mode MOSFET manufactured by Infineon Technologies. It is housed in the SOT-323 surface-mount package, designated as PG-SOT323-3. The device features a maximum drain-source breakdown voltage of 50V and a continuous drain current rating of 100mA. Key electrical characteristics include a typical gate threshold voltage range between -0.4V and -1.8V, ensuring reliable switching behavior. The component is RoHS compliant and lead-free, suitable for automated assembly processes with a peak reflow temperature of 260°C.

Feature Summary

  • Depletion mode operation providing normally-on functionality for constant current applications
  • Compact SOT-323 surface-mount package design for space-constrained layouts
  • RoHS compliant construction with halogen-free materials

Applications

  • Constant current source circuits
  • High-frequency switching applications
  • General-purpose discrete transistor designs

Procurement Notes

Verify the specific ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the procurement channel provides genuine components with traceable manufacturing data. Check for any specific handling requirements related to moisture sensitivity level classification during storage and soldering.

Selection Notes

Select this component when a normally-on N-channel configuration is required within a compact footprint. Evaluate the 50V breakdown voltage and 100mA current limits against circuit load requirements. Consider the negative gate threshold voltage characteristics for biasing network design and logic interface compatibility.

Part Context

This component belongs to Infineon's general-purpose transistor portfolio, specifically within the depletion mode MOSFET category. It complements enhancement mode devices by offering alternative switching topologies. The SOT-323 packaging aligns with industry standards for high-density surface mount technology implementations.

Replacement Considerations

Cross-reference with other depletion mode MOSFETs in the SOT-323 package from various manufacturers. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure thermal and voltage ratings meet or exceed original design specifications.

BF799WE6327BTSA1BF799WE6327BTSA1

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