SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BF886H6327XTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 4 GHz with a transition frequency supporting high-frequency applications. The device features a collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 3 V. It supports a continuous collector current of 70 mA and maintains a minimum DC current gain (hFE) of 70. Designed for surface-mount installation, it functions within a temperature range of -65°C to +150°C and holds AEC-Q101 qualification for automotive reliability standards.