BF908,215

Overview

The BF908,215 is a dual-gate N-channel MOSFET manufactured by NXP USA Inc. It is housed in an SOT-143R surface-mount package. The device is rated for a maximum drain-source voltage of 12 V and supports a continuous drain current of 40 mA. Designed for high-frequency applications, it features low gate charge characteristics suitable for RF mixing and switching circuits.

Feature Summary

• Dual-gate architecture enabling versatile RF mixing and switching configurations
• N-channel enhancement mode operation optimized for low-voltage logic interfaces
• Compact SOT-143R surface-mount footprint facilitating automated PCB assembly

Applications

• RF mixer stages in communication receivers
• High-speed switching circuits in consumer electronics
• Signal modulation and demodulation modules

Procurement Notes

Verify the exact part marking against the official NXP datasheet to confirm the SOT-143R package variant. Ensure the supplier provides traceability documentation matching the BF908,215 designation. Cross-reference the manufacturer's latest revision history to avoid obsolete lot codes or packaging discrepancies during procurement.

Selection Notes

Select this component when a dual-gate topology is required for frequency conversion or signal routing in low-power RF designs. Compare its 12 V rating and 40 mA current capacity against system requirements. Evaluate the SOT-143R thermal performance relative to available board space and cooling constraints for the specific application environment.

Part Context

This component belongs to NXP's discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a fundamental building block for analog and RF front-end circuits. The dual-gate structure distinguishes it from standard single-gate power MOSFETs, offering unique control capabilities for signal processing tasks.

Replacement Considerations

Consult the official NXP replacement guide for direct equivalents. Verify pinout compatibility and electrical specifications before substituting with other dual-gate MOSFETs from different manufacturers.