BF959RL1G

Overview

The BF959RL1G is an NPN silicon VHF transistor manufactured by onsemi, housed in a TO-92 (Case 29) package. It features a collector-emitter voltage of 20 Vdc and a continuous collector current of 100 mAdc. The device provides a minimum DC current gain of 35 at 5 mA and 40 at 20 mA. Its small-signal characteristics include a current-gain bandwidth product of 600 MHz to 700 MHz and a noise figure of 3.0 dB at 200 MHz. Thermal resistance from junction to ambient is 200 °C/W, with a total device dissipation of 625 mW at 25°C ambient temperature.

Feature Summary

• Designed for Very High Frequency (VHF) applications
• Optimized low noise performance for RF circuits
• High current-gain bandwidth product for signal amplification

Applications

• VHF amplifier stages
• RF front-end circuits
• Low-noise signal processing

Procurement Notes

Verify the specific ordering suffix RL1G confirms tape and reel packaging containing 2000 units per reel. Confirm RoHS compliance status as indicated by the G suffix. Ensure the TO-92 pinout matches Style 21 (Collector, Base, Emitter) required by the target circuit design before finalizing procurement.

Selection Notes

Select this component when a VHF NPN transistor with a 20 V collector-emitter rating and 100 mA current capability is required. Consider its 3.0 dB noise figure for sensitive RF input stages. Verify that the TO-92 through-hole package fits the mechanical constraints of the assembly.

Part Context

This part belongs to the BF959 series of VHF transistors produced by onsemi. The BF959RL1G variant specifically denotes the lead-free version supplied in a tape and reel format. It serves as a discrete solution for high-frequency analog signal handling within the broader portfolio of bipolar junction transistors.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate other VHF NPN transistors with similar 20 V ratings and comparable noise figures if availability is an issue.