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Product Detailed Parameters
- Description：RF TRANS NPN 12V 8GHZ SOT-223-4
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain：10.5dB ~ 16dB
- Power - Max：600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 30mA, 8V
- Current - Collector (Ic) (Max)：80mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：PG-SOT223-4
- Grade：-
- Qualification：-
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Overview
The BFG 193 E6433 is an NPN silicon RF transistor designed for low noise and high-gain amplifiers up to 2 GHz. It features a transition frequency (fT) of 8 GHz at 500 MHz, with a minimum DC current gain (hFE) of 70. The device operates within a collector-emitter voltage range of 12 V and supports a maximum collector current of 80 mA. Power dissipation reaches 600 mW at a case temperature of 87°C or lower. It is housed in a SOT-223 package and complies with AEC-Q101 automotive qualification standards.
Feature Summary
- Optimized for low noise and high-gain applications in linear broadband amplifiers
- High transition frequency supporting operation up to 2 GHz
- Automotive qualified according to AEC-Q101 standards
Applications
- Low noise amplifiers operating up to 2 GHz
- Linear broadband amplifiers
- RF signal processing circuits requiring high gain
Procurement Notes
Verify component authenticity through authorized Infineon channels. Confirm the specific ordering suffix matches project requirements. Check datasheet revisions for any updates to electrical characteristics or thermal parameters before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high-frequency performance with low noise figures. Ensure the PCB layout accommodates the SOT-223 package dimensions. Verify that the thermal management strategy can handle the specified power dissipation limits under worst-case operating conditions.
Part Context
This part belongs to the BFG series of NPN silicon RF transistors from Infineon Technologies. It is specifically engineered for radio frequency applications where high gain and low noise are critical. The E6433 suffix indicates the specific packaging and tape-and-reel configuration used for automated assembly.
Replacement Considerations
No direct public substitute part numbers are documented in the provided source material. Evaluate alternative RF transistors based on matching fT, noise figure, and package compatibility if replacement is necessary.
