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Product Detailed Parameters
- Description：RF TRANS NPN 15V 5.5GHZ SOT223-4
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5.5GHz
- Noise Figure (dB Typ @ f)：1.7dB @ 900MHz
- Gain：12.5dB
- Power - Max：2W
- DC Current Gain (hFE) (Min) @ Ic, Vce：75 @ 200mA, 8V
- Current - Collector (Ic) (Max)：300mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：PG-SOT223-4
- Grade：-
- Qualification：-
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Overview
The BFG 235 E6327 is an NPN silicon RF transistor designed for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz. It operates at collector currents from 120 mA to 250 mA and features an integrated emitter ballast resistor. The device has a maximum collector-emitter voltage of 15 V, a transition frequency of 5.5 GHz, and a total power dissipation of 2 W. It is housed in an SOT-223 package with four pins (Emitter, Base, Emitter, Collector) and is qualified according to AEC-Q101 standards.
Feature Summary
- Integrated emitter ballast resistor for improved thermal stability
- Designed for low-distortion broadband output amplifier applications
- Qualified according to AEC-Q101 automotive standards
Applications
- Low-distortion broadband output amplifier stages in antenna systems
- Telecommunication systems operating up to 2 GHz
- Power amplifiers for DECT and PCN systems
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches the required packaging format. Check current availability status as the product may be discontinued or subject to limited supply constraints. Ensure handling precautions are followed due to ESD sensitivity.
Selection Notes
Select this component for RF applications requiring high linearity and broad bandwidth up to 2 GHz. Consider the 15 V collector-emitter voltage limit and 2 W power dissipation capability when designing thermal management solutions. The integrated emitter ballast resistor simplifies biasing networks. Verify that the SOT-223 package footprint aligns with the PCB layout requirements.
Part Context
The BFG 235 is part of Infineon's portfolio of silicon RF transistors optimized for telecommunications. It belongs to the BFG series, which focuses on performance in broadband amplifier stages. The E6327 suffix typically denotes specific packaging or tape-and-reel configurations used by manufacturers and distributors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for equivalent components if the BFG 235 is unavailable.
