BFG10,215

BFG10,215

$0.42
  • Description:RF TRANS NPN 8V 1.9GHZ SOT-143B
  • Series:-

SKU:eda698aba1cf Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 8V 1.9GHZ SOT-143B
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):8V
  • Frequency - Transition:1.9GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB
  • Power - Max:400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 50mA, 5V
  • Current - Collector (Ic) (Max):250mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143B
  • Grade:-
  • Qualification:-

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BFG10,215

Overview

The BFG10,215 is an NPN bipolar RF transistor manufactured by NXP USA Inc. It operates with a collector-emitter breakdown voltage of 8V and supports a maximum DC current of 250mA. The device features a minimum DC current gain (hFE) of 25 at 50mA and 5V. It has a maximum power dissipation of 400mW and a transition frequency up to 1.9GHz. The component provides a typical gain of 7dB and is housed in a surface-mount SOT-143B package.

Feature Summary

  • NPN bipolar junction transistor architecture optimized for radio frequency applications
  • Surface-mount construction utilizing the SOT-143B plastic package
  • Designed for low-voltage operation with 8V collector-emitter breakdown capability

Applications

  • RF signal amplification circuits
  • Low-noise amplifier stages
  • General-purpose RF switching applications

Procurement Notes

Verify part authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix matches the required specifications. Note that this component is listed as obsolete; ensure alternative sourcing strategies are in place for production continuity. Request original datasheets to validate electrical parameters against design requirements before procurement.

Selection Notes

Select this component for designs requiring an NPN RF transistor with an 8V breakdown voltage and 400mW power handling. Ensure the circuit layout accommodates the SOT-143B footprint. Consider the 1.9GHz frequency limit when designing for higher frequency operations. Verify thermal management capabilities given the surface-mount package constraints and power dissipation limits.

Part Context

This component belongs to the NXP Bipolar RF Transistors category. It is designed for use in radio frequency circuits where small-signal amplification is required. The SOT-143B package allows for compact PCB integration. It serves as a discrete semiconductor solution for RF front-end modules and communication devices.

Replacement Considerations

The BFG10,215 is marked as No Longer Manufactured. Public confirmed substitute part numbers are not available in the provided documentation. Engineers must identify equivalent components based on matching electrical parameters such as voltage, current, and frequency ratings.

BFG10,215BFG10,215
$0.42
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