BFG25AW/X,115

Overview

The BFG25AW/X,115 is an NPN silicon planar epitaxial transistor designed for wideband applications. It features a dual-emitter configuration housed in a 4-pin SOT343N plastic package with gold metallization for reliability. The device operates with a collector-base voltage of 8 V and a collector-emitter voltage of 5 V. Key electrical characteristics include a transition frequency (fT) of up to 5 GHz at 1 mA collector current and a maximum unilateral power gain of 16 dB at 1 GHz. It exhibits low noise figures and low current consumption, making it suitable for UHF low-power amplifiers.

Feature Summary

• Dual-emitter architecture within a compact surface-mount package
• Gold metallization construction ensuring high reliability
• Optimized for low noise figure performance in RF circuits
• Low DC current consumption capabilities

Applications

• Wideband applications in UHF low power amplifiers
• Pocket telephones
• Paging systems

Procurement Notes

Verify the specific ordering suffix /X,115 against the manufacturer's current product status page, as this component may be discontinued or superseded by newer revisions. Confirm that the SOT343N package dimensions match the design requirements. Ensure compliance with RoHS directives if required by the target application environment before finalizing procurement plans.

Selection Notes

Select this component for designs requiring wideband amplification in the UHF spectrum with strict size constraints due to the small SOT343N footprint. Consider the 500 mW total power dissipation limit and thermal resistance when designing heat management solutions. Verify that the 5 V collector-emitter voltage rating aligns with the circuit's supply rails and signal swing requirements.

Part Context

This part belongs to the BFG25AW series of NPN 5 GHz wideband transistors manufactured by NXP Semiconductors. The datasheet indicates it supersedes data from August 1995. The /X,115 suffix typically denotes a specific tape-and-reel packaging variant intended for automated surface-mount assembly processes.

Replacement Considerations

Consult the official NXP website for the most recent product status information regarding discontinuation. Identify alternative wideband NPN transistors with comparable fT ratings and SOT343N compatibility if this specific part number is no longer available for production.

FAQ

What is the difference between the BFG25AW and BFG25AW/X pin configurations?

The BFG25AW has pins 1 (collector), 2 (base), 3 (emitter), and 4 (emitter). The BFG25AW/X rearranges these to pins 1 (collector), 2 (emitter), 3 (base), and 4 (emitter).

What is the maximum unilateral power gain at 1 GHz?

The maximum unilateral power gain (GUM) is typically 16 dB at 1 GHz with a collector current of 0.5 mA and VCE of 1 V.

What is the thermal resistance from junction to soldering point?

The thermal resistance (Rth j-s) from junction to soldering point is 180 K/W when the soldering point temperature is less than or equal to 85 °C.