BFG310/XR,215

Description：RF TRANS NPN 6V 14GHZ SOT-143R
Series：-

SKU:bc643471854f Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 6V 14GHZ SOT-143R
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：6V
Frequency - Transition：14GHz
Noise Figure (dB Typ @ f)：1dB @ 2GHz
Gain：18dB
Power - Max：60mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 3V
Current - Collector (Ic) (Max)：10mA
Operating Temperature：175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-143R
Supplier Device Package：SOT-143R
Grade：-
Qualification：-

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BFG310/XR,215

Overview

The BFG310/XR is an NPN silicon planar epitaxial transistor housed in a 4-pin SOT143R plastic package. It operates with a collector-emitter voltage of 6 V and supports a maximum DC collector current of 10 mA. The device features a transition frequency of 14 GHz and delivers a typical maximum stable gain of 18 dB at 1.8 GHz. Total power dissipation is rated at 60 mW, with a junction temperature limit of 175 °C. Key electrical characteristics include a noise figure of 1 dB at 2 GHz and a collector-base capacitance of 0.17 pF.

Feature Summary

High power gain suitable for RF amplification
Low noise figure for sensitive signal reception
High transition frequency enabling GHz range operation
Gold metallization ensuring excellent reliability

Applications

Analog and digital cellular telephones
Cordless telephones (CT, PCN, DECT)
Radar detectors
Satellite Antenna TeleVision (SATV) tuners
Repeater amplifiers in fiber-optic systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm availability and packaging details. Confirm that the component meets RoHS3 compliance requirements for your design. Ensure the SOT143R package dimensions align with your PCB footprint specifications before finalizing procurement.

Selection Notes

Select this component for wideband RF front-end designs requiring high transition frequencies and low noise figures. Verify that the operating conditions remain within the specified collector-emitter voltage and current limits. Consider the thermal resistance from junction to solder point when designing heat dissipation strategies for the application.

Part Context

This device belongs to the BFG31 series of NPN silicon transistors designed for radio frequency applications. It utilizes a planar epitaxial structure optimized for high-frequency performance. The SOT143R package provides a compact surface-mount solution suitable for modern electronic devices requiring small form factors.