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The BFG310W/XR,115 is an NPN silicon planar epitaxial transistor housed in a 4-pin SOT343R (CMPAK-4) plastic package. It operates as a wideband RF device with a transition frequency of 14 GHz and a maximum collector-emitter voltage of 6 V. The component supports a DC collector current of 10 mA and total power dissipation of 60 mW at a solder point temperature up to 145 °C. Key electrical characteristics include a minimum DC current gain of 60, a typical noise figure of 1 dB at 2 GHz, and a maximum stable gain of 18 dB at 1.8 GHz.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for specific manufacturing origin markings on the package. Ensure storage conditions meet specified limits to maintain junction integrity before assembly.
Select this component for designs requiring high-frequency performance within a low-voltage constraint. Verify that the application circuit can maintain the collector-emitter voltage below 6 V and keep power dissipation under 60 mW. Ensure thermal management allows the solder point temperature to remain within the specified operating range.
This part belongs to the BFG31 series of NPN silicon transistors designed for radio frequency applications. The 'XR' suffix indicates specific processing variations, while ',115' denotes the tape and reel packaging format. It is manufactured by NXP USA Inc. and utilizes reverse pinning configuration within the SOT343R package.
Publicly confirmed substitute part numbers include 2SC4726TLP from Rohm Semiconductor, HFA3102BZ from Renesas Electronics Corporation, and MAX2602ESA+ from Analog Devices Inc./Maxim Integrated.