BFG410W,115

Description：RF TRANS NPN 4.5V 22GHZ CMPAK-4
Series：-

SKU:6ba389f70270 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4.5V 22GHZ CMPAK-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4.5V
Frequency - Transition：22GHz
Noise Figure (dB Typ @ f)：0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain：21dB
Power - Max：54mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 2V
Current - Collector (Ic) (Max)：12mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：CMPAK-4
Grade：-
Qualification：-

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BFG410W,115

Overview

The BFG410W is an NPN double polysilicon wideband transistor with a buried layer, designed for low voltage applications in a plastic SOT343R package. It features a transition frequency of 22 GHz and a maximum power gain of 21 dB at 2 GHz. The device operates with a collector-emitter voltage of 4.5 V and a DC collector current of 10 mA. Key electrical parameters include a noise figure of 1.2 dB at 2 GHz and a feedback capacitance of 45 fF. Total power dissipation is rated at 54 mW.

Feature Summary

Very high power gain suitable for RF front end stages
Low noise figure optimized for sensitive signal reception
High transition frequency enabling broadband operation
Emitter serves as the thermal lead for heat dissipation

Applications

RF front end modules
Wideband applications such as analog and digital cellular telephones
Cordless telephones including PHS and DECT systems
Radar detectors
Satellite television tuners (SATV)

Procurement Notes

Verify the component status and datasheet revision before design-in. Confirm that the SOT343R package orientation matches the reverse pinning specification. Ensure electrostatic discharge precautions are followed during handling and transport to prevent damage to the sensitive silicon structure.

Selection Notes

Select this component for low voltage RF circuits requiring high gain and low noise. Verify that the operating conditions remain within the absolute maximum ratings, specifically the 4.5 V collector-emitter voltage limit. Consider the thermal resistance from junction to soldering point when designing the PCB layout for adequate heat dissipation.

Part Context

This part is manufactured by NXP Semiconductors. It belongs to the discrete semiconductor category, specifically classified as an NPN wideband transistor. The product specification supersedes earlier data from October 1997. The marking code for the device is P4.