BFG410W,135

Overview

The BFG410W,135 is an NPN wideband silicon germanium transistor designed for low voltage RF applications. It utilizes a plastic SOT343R package with four pins and features a buried layer structure. The device operates with a maximum collector-emitter voltage of 4.5 V and a DC collector current of 12 mA. Key electrical parameters include a transition frequency of 22 GHz and a maximum power gain of 21 dB at 2 GHz. Total power dissipation is rated at 54 mW when the soldering point temperature is maintained at or below 110 °C.

Feature Summary

• High transition frequency suitable for microwave frequencies
• Low noise figure optimized for sensitive front-end stages
• Emitter pin serves as the primary thermal lead

Applications

• RF front end modules
• Wideband cellular telephone systems
• Satellite television tuners (SATV)
• High frequency oscillators

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel quantity and packaging format. Confirm RoHS compliance status and ensure the component meets the required automotive or industrial qualification standards before finalizing procurement orders.

Selection Notes

Select this component for low-voltage designs requiring high-frequency performance up to 22 GHz. Ensure the application circuit provides adequate thermal management to keep the soldering point temperature within the specified limits during operation.

Part Context

This part belongs to the NXP Semiconductors discrete semiconductor portfolio. It is specifically categorized as an NPN wideband transistor intended for use in radio frequency circuits where low noise and high gain are critical requirements.

Replacement Considerations

Consult official documentation for direct substitutes. Verify that any alternative component matches the SOT343R package dimensions and maintains equivalent RF characteristics.