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Product Detailed Parameters
- Description：RF TRANS NPN 4.5V 25GHZ CMPAK-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.5V
- Frequency - Transition：25GHz
- Noise Figure (dB Typ @ f)：0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
- Gain：22dB
- Power - Max：135mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 25mA, 2V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：CMPAK-4
- Grade：-
- Qualification：-
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Overview
The BFG424W is an NPN double polysilicon wideband transistor with a buried layer, designed for low voltage applications in a plastic SOT343R package. Key electrical parameters include a collector-base voltage (VCBO) of 10 V and a collector-emitter voltage (VCEO) of 4.5 V. The maximum collector current is 30 mA, with total power dissipation rated at 135 mW. It features a transition frequency (fT) of 25 GHz and a maximum power gain (Gp(max)) of 22 dB at 2 GHz. Noise figure is typically 1.2 dB at 2 GHz.
Feature Summary
- Very high power gain
- Low noise figure
- High transition frequency
- Emitter serves as thermal lead
Applications
- Radio Frequency (RF) front end wideband applications
- Analog and digital cellular telephones
- Cordless telephones (CT, PHS, DECT)
- Radar detectors
- Satellite Antenna TeleVison (SATV) tuners
Procurement Notes
Verify the component status before procurement, as the product may be listed as no longer manufactured. Confirm the specific ordering suffix matches the required tape reel configuration. Ensure ESD precautions are observed during handling due to device sensitivity. Cross-reference the marking code ND* to validate authenticity against official datasheets.
Selection Notes
Select this component for low voltage RF wideband applications requiring high transition frequency and low noise figure. Verify that the operating conditions remain within the absolute maximum ratings, specifically the 4.5 V collector-emitter voltage limit. Consider the SOT343R package dimensions and reverse pinning when designing PCB footprints. Evaluate thermal resistance requirements based on the emitter solder point temperature constraints.
Part Context
The BFG424W is part of NXP Semiconductors' portfolio of NPN double polysilicon wideband transistors. It utilizes a buried layer structure optimized for low voltage performance. The device is housed in a compact SOT343R surface-mounted package with four leads. This series targets high-frequency communication systems where small form factor and efficient heat dissipation through the emitter are critical design factors.
Replacement Considerations
Consult official replacement lists or cross-reference databases for verified substitutes. Ensure any alternative component matches the SOT343R package and electrical specifications. Verify compatibility with existing circuit designs before implementation.
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) with an open base is 4.5 V.
How does the emitter function thermally?
The emitter acts as the thermal lead, and the total power dissipation rating depends on the temperature at the soldering point of the emitter pins.
What is the typical noise figure at 2 GHz?
The typical noise figure is 1.2 dB at 2 GHz with a collector current of 2 mA and VCE of 2 V.
