BFG425W,115

Bipolar RF Transistors Overview

The BFG425W,115 is an NPN double polysilicon wideband transistor with a buried layer, housed in a plastic 4-pin dual-emitter SOT343R package. It features a very high transition frequency of 25 GHz and maximum power gain of 20 dB at 2 GHz under standard test conditions (VCE = 2 V, IC = 25 mA). The device offers low noise figures, reaching 0.8 dB at 900 MHz and 1.2 dB at 2 GHz. Key electrical limits include a collector-base voltage of 10 V, collector-emitter voltage of 4.5 V, and total power dissipation of 135 mW.

Bipolar RF Transistors Feature Summary

• Very high power gain suitable for RF front end applications
• Low noise figure optimized for sensitive signal reception
• High transition frequency enabling wideband operation
• Emitter serves as thermal lead for efficient heat dissipation

Bipolar RF Transistors Applications

• RF front end modules
• Analog and digital cellular telephones
• Cordless telephones (PHS, DECT)
• Radar detectors
• Satellite television tuners (SATV)

Bipolar RF Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging orientation and tape reel specifications. The '115' suffix indicates a standard product orientation on a tape reel. Ensure compatibility with anti-static handling protocols during transport and assembly to prevent electrostatic discharge damage to the semiconductor junctions.

Bipolar RF Transistors Selection Notes

Select this component for low-voltage, high-frequency designs requiring minimal noise impact. Verify that the operating collector current remains within the 25 mA typical range to maintain optimal gain and noise performance. Confirm that the system design accommodates the 4.5 V collector-emitter voltage limit and utilizes the emitter pins effectively for thermal management.

Bipolar RF Transistors Part Context

This part belongs to the BFG425W series of NPN wideband transistors manufactured by NXP Semiconductors. The datasheet supersedes earlier versions from March 1998, reflecting updated specifications and package outlines. The device utilizes silicon germanium technology to achieve its high-speed characteristics in a compact surface-mount form factor.

Bipolar RF Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.