BFG425W,135

Overview

The BFG425W,135 is an NPN double polysilicon wideband transistor with a buried layer, housed in a plastic 4-pin dual-emitter SOT343R package. It features a transition frequency of 25 GHz and a maximum power gain of 20 dB at 2 GHz under standard conditions (VCE = 2 V, IC = 25 mA). The device supports a collector current of up to 30 mA and dissipates 135 mW. Key electrical parameters include a noise figure of 1.2 dB at 2 GHz and a feedback capacitance of 95 fF.

Feature Summary

• Very high power gain suitable for RF front end applications
• Low noise figure optimized for sensitive signal reception
• High transition frequency enabling wideband operation
• Emitter serves as the thermal lead for efficient heat dissipation

Applications

• RF front end modules
• Analog and digital cellular telephones
• Cordless telephones (PHS, DECT)
• Radar detectors
• Satellite television tuners (SATV)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging orientation and tape reel specifications. Ensure that the component meets all applicable environmental compliance standards required for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for low voltage applications requiring high density surface mount installation. Consider the SOT343R package dimensions and the emitter pin configuration for thermal management and PCB layout constraints when integrating into the circuit design.

Part Context

This part belongs to the BFG425W series of NPN wideband transistors manufactured by NXP Semiconductors. The datasheet supersedes previous versions from March 1998, maintaining consistent technical specifications while updating product status information and package outline drawings to reflect current manufacturing standards.

Replacement Considerations

Consult official substitution lists for verified alternatives. Generic cross-references may not match the specific SOT343R package or electrical characteristics required for high-frequency performance.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) with an open base is rated at -4.5 V.

How does the emitter configuration affect thermal performance?

The emitter acts as the thermal lead, facilitating heat dissipation through the soldering point to maintain junction temperature within safe operating limits.

What is the typical noise figure at 2 GHz?

The typical noise figure is 1.2 dB when measured at a collector current of 2 mA, VCE of 2 V, and frequency of 2 GHz.