BFG480W,135

Description：RF TRANS NPN 4.5V 21GHZ CMPAK-4
Series：-

SKU:b7ef03640c94 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4.5V 21GHZ CMPAK-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4.5V
Frequency - Transition：21GHz
Noise Figure (dB Typ @ f)：1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain：16dB
Power - Max：360mW
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 80mA, 2V
Current - Collector (Ic) (Max)：250mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：CMPAK-4
Grade：-
Qualification：-

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BFG480W,135

Overview

The BFG480W is an NPN wideband transistor designed for low voltage RF applications. It features a transition frequency of 21 GHz and maximum power gain of 16 dB at 2 GHz. The device operates with a collector-emitter voltage limit of 4.5 V and supports DC collector currents up to 250 mA. In pulsed class-AB operation at 3.6 V, it delivers 20 dBm output power with over 40% efficiency. The component utilizes a SOT343R package where the emitter serves as the thermal lead.

Feature Summary

High power gain and high efficiency suitable for driver stages
Low noise figure optimized for sensitive front-end reception
Emitter pin functions as thermal lead for effective heat dissipation
Low feedback capacitance enhances stability in broadband circuits

Applications

RF front end requiring high linearity for CDMA systems
Common emitter class AB driver amplifier stages
Wideband amplification in AMPS, TDMA, and GSM systems

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm availability status. Ensure anti-static handling protocols are strictly followed during transport and assembly to prevent electrostatic discharge damage. Confirm that the soldering point temperature remains within specified limits during reflow processes to maintain device integrity.

Selection Notes

Select this component for low voltage designs requiring high transition frequency and linear performance. Evaluate thermal resistance characteristics carefully as the emitter acts as the primary thermal path. Ensure biasing conditions align with the specified collector current ranges to optimize gain and noise figure performance across the target frequency band.

Part Context

This device belongs to the fifth generation of transistors from Philips Semiconductors, now NXP. It is engineered specifically for PA driver roles in mobile communication standards. The design integrates double polysilicon technology with a buried layer to support efficient operation in compact surface-mount packages.