BFG520W/X,115

Overview

The BFG520W/X,115 is an NPN silicon planar epitaxial transistor housed in a 4-pin dual-emitter SOT343N plastic package. It operates with a collector-base voltage of 20 V and a collector-emitter voltage of 15 V. The device supports a maximum DC collector current of 70 mA and total power dissipation of 500 mW at a soldering point temperature up to 85 °C. Key electrical characteristics include a transition frequency of 9 GHz, a minimum DC current gain of 60, and a typical noise figure of 1.1 dB at 900 MHz.

Feature Summary

• High power gain suitable for RF front-end applications
• Low noise figure optimized for signal reception
• High transition frequency enabling GHz range operation
• Gold metallization ensuring excellent reliability

Applications

• Analog and digital cellular telephones
• Cordless telephones (CT2, CT3, PCN, DECT)
• Radar detectors
• Satellite television tuners (SATV)
• Repeater amplifiers in fibre-optic systems

Procurement Notes

Verify the specific ordering code BFG520W/X,115 against the manufacturer's latest documentation to confirm availability and compliance with current RoHS standards. Ensure that the SOT343N package dimensions align with your PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component for wideband RF applications requiring high gain and low noise in the GHz range. Consider the 70 mA collector current limit and 500 mW power dissipation constraints when designing bias circuits. Verify thermal management capabilities to maintain junction temperatures within the specified limits during operation.

Part Context

This part belongs to the BFG520W series of NPN wideband transistors manufactured by NXP Semiconductors. It shares similar electrical characteristics with the standard BFG520W but may differ in packaging or reel specifications indicated by the suffix. The device is designed for robust performance in consumer communication equipment.

Replacement Considerations

Direct substitutes include the BFG520W from NXP Semiconductors. Verify pinout compatibility and electrical parameters such as transition frequency and power gain before implementing any alternative components in existing designs.