BFG540

BFG540

$0.36
  • Description:RF TRANS NPN 15V 9GHZ SOT-143B
  • Series:-

SKU:024e99d5562c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 15V 9GHZ SOT-143B
  • Series:-
  • Mfr:EVVO
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:9GHz
  • Noise Figure (dB Typ @ f):1.9dB ~ 2.1dB @ 900MHz ~ 2GHz
  • Gain:16dB
  • Power - Max:400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 40mA, 8V
  • Current - Collector (Ic) (Max):120mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143B
  • Grade:-
  • Qualification:-

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BFG540

Overview

The BFG540 is an NPN silicon epitaxial transistor designed for microwave low-noise amplifier applications. It features a transition frequency of 9 GHz, a collector-emitter breakdown voltage of 15 V, and a maximum collector current of 120 mA. The device dissipates up to 400 mW of power and operates within a junction temperature range of -65°C to +150°C. Electrical characteristics include a typical noise figure of 1.3 dB at 900 MHz and a DC current gain (hFE) ranging from 60 to 250. It is available in SOT143B and SOT143R surface-mount packages.

Feature Summary

  • High power gain suitable for wideband GHz applications
  • Low noise figure optimized for sensitive signal reception
  • Gold metallization structure ensuring high reliability

Applications

  • Digital cable TV set-top boxes
  • Satellite TV tuners
  • CATV amplifiers and repeater amplifiers
  • Analog and digital cordless telephones
  • RF modules and fiber-optic transmission systems

Procurement Notes

Verify the specific package variant required, as the BFG540 is manufactured in both SOT143B and SOT143R configurations with distinct pin assignments. Confirm that the marking code matches the intended package type before integration. Ensure the supplier provides documentation confirming compliance with RoHS standards. Cross-reference the manufacturer's datasheet for exact thermal dissipation limits under your specific ambient conditions.

Selection Notes

Select this component when designing circuits requiring high-frequency performance around 9 GHz with minimal signal degradation. The device is appropriate for broadband applications where low noise figures are critical. Consider the 15 V collector-emitter breakdown voltage when determining supply requirements. Evaluate the 400 mW power dissipation capability against your thermal management strategy to ensure stable operation across the specified temperature range.

Part Context

The BFG540 belongs to a family of NPN microwave transistors engineered for high-frequency signal processing. Variants such as the BFG540/X and BFG540/XR share identical electrical performance but differ in physical packaging and manufacturer labeling. These components are widely utilized in telecommunications infrastructure and consumer electronics requiring reliable RF amplification.

Replacement Considerations

The BFG540/X is electrically equivalent to the standard BFG540 but utilizes different labeling. Verify pin compatibility if substituting between SOT143B and SOT143R packages due to differing pinout configurations.

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