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The BFG590/X,215 is an NPN silicon planar epitaxial transistor designed for wideband applications up to 5 GHz. It utilizes a dual-emitter SOT-143B plastic package with gold metallization for reliability. Key electrical parameters include a collector-base voltage of 20 V, collector-emitter voltage of 15 V, and DC collector current of 200 mA. The device features a transition frequency of 5 GHz at 80 mA and 4 V, with a maximum unilateral power gain of 13 dB at 900 MHz. Total power dissipation is rated at 400 mW when the soldering point temperature is maintained at or below 60 °C.
Verify the specific ordering suffix against the manufacturer's current product database to confirm availability status. Check RoHS compliance details directly from the official datasheet as regulatory requirements may vary by region. Confirm that the SOT-143B package dimensions match your PCB footprint requirements before finalizing procurement decisions.
Select this component for designs requiring high transition frequency and low feedback capacitance in the VHF/UHF bands. Ensure thermal management allows the collector pin soldering point temperature to remain within the specified limits to maintain the 400 mW power dissipation rating. Consider the dual-emitter configuration for improved RF performance compared to single-emitter alternatives.
This part belongs to the BFG590 series of NPN wideband transistors manufactured by NXP Semiconductors. The '/X' designation typically indicates a specific reel packaging variant intended for automated surface-mount assembly processes. It shares core electrical characteristics with the standard BFG590 but differs in shipping configuration.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers, ensuring matching voltage ratings and package dimensions.