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The BFG67,235 is an NPN silicon RF transistor manufactured by NXP Semiconductors. It is housed in a SOT-89 surface-mount package designed for high-frequency applications. The device features a maximum collector-emitter voltage of 14 V and a maximum collector current of 0.5 A. It operates with a transition frequency suitable for radio frequency amplification tasks. The component complies with RoHS standards and is lead-free, ensuring environmental safety for modern electronic assemblies.
Verify the specific suffix 235 to confirm tape-and-reel packaging orientation. Ensure the procurement source provides valid RoHS certificates. Cross-reference the manufacturer part number against official NXP databases to avoid counterfeit components. Confirm moisture sensitivity levels prior to soldering processes.
Select this component when an NPN RF transistor with moderate power handling is required. The SOT-89 package offers a balance between thermal performance and board space efficiency. Consider the 14 V breakdown voltage for low-voltage RF systems. Evaluate thermal resistance requirements for the specific application environment.
This part belongs to NXP's portfolio of bipolar junction transistors designed for radio frequency applications. It complements other wideband transistors like the BFG series. The device supports designs requiring reliable RF performance in compact form factors. It is distinct from digital switching transistors or general-purpose analog devices.
Check for direct pin-compatible alternatives within the BFG series. Verify that substitute parts match the SOT-89 footprint and electrical characteristics. Consult NXP documentation for recommended cross-reference models if the BFG67 is discontinued.