BFG93A/X,215

$0.14

Description：RF TRANS NPN 12V 6GHZ SOT-143B
Series：-

SKU:eb8e73434402 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 6GHZ SOT-143B
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：6GHz
Noise Figure (dB Typ @ f)：1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
Gain：-
Power - Max：300mW
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 30mA, 5V
Current - Collector (Ic) (Max)：35mA
Operating Temperature：175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-253-4, TO-253AA
Supplier Device Package：SOT-143B
Grade：-
Qualification：-

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BFG93A/X,215

Overview

The BFG93A/X,215 is an NPN wideband transistor designed for radio frequency applications up to 6 GHz. It features a dual-emitter configuration housed in a SOT143B plastic surface-mounted package with four leads and a 1.9 mm pitch. The device operates at a maximum collector-emitter voltage of 12 V and supports a continuous collector current of 35 mA. Key electrical characteristics include a maximum power dissipation of 300 mW and a noise figure of 4 dB. This component is engineered for high power gain and low noise performance in broadband circuits.

Feature Summary

High power gain capability for efficient signal amplification
Low noise figure suitable for sensitive RF front-end stages
Dual-emitter architecture within a compact SOT143B package

Applications

Wideband RF amplification
Broadband communication systems
RF signal processing circuits

Procurement Notes

Verify the obsolete status of this part number before procurement planning. Confirm availability through authorized distributors or secondary market suppliers, as original manufacturing has ceased. Ensure that any substitute components meet the required 6 GHz frequency range and SOT143B package dimensions to maintain circuit integrity.

Selection Notes

Select this component for designs requiring wideband operation up to 6 GHz with specific emphasis on low noise performance. The dual-emitter structure offers distinct advantages for certain biasing configurations. Consider the thermal constraints imposed by the 300 mW power dissipation limit when designing the PCB layout for adequate heat management.

Part Context

This transistor belongs to the BFG93 series of NPN wideband devices from NXP Semiconductors. The series is characterized by its ability to operate effectively in high-frequency applications. The BFG93A variant specifically utilizes the SOT143B package, distinguishing it from other pinout or package variations within the broader product family.