BFG93A,215

Overview

The BFG93A,215 is a silicon NPN RF bipolar transistor manufactured by NXP Semiconductors. It is designed for high-frequency applications with a maximum collector-emitter voltage of 15 V and a continuous collector current of 120 mA. The device features a DC current gain (hFE) minimum of 100 and a power dissipation rating of 400 mW. It operates up to a frequency of 9 GHz and is housed in an SOT-143R surface-mount package.

Feature Summary

• High-frequency operation capability up to 9 GHz
• Single NPN configuration for RF signal processing
• Surface-mount design for automated assembly

Applications

• RF amplifier stages
• High-frequency oscillator circuits
• Wireless communication transceivers

Procurement Notes

Verify the specific ordering code BFG93A,215 against official NXP documentation to confirm availability status. Check for RoHS compliance details and lifecycle notifications directly from the manufacturer before procurement planning.

Selection Notes

Select this component when a single NPN transistor with 15 V breakdown and 9 GHz performance is required. Ensure the SOT-143R package fits the PCB layout constraints and that thermal management supports the 400 mW dissipation limit.

Part Context

This part belongs to the NXP BFG series of RF bipolar transistors. These components are engineered for general-purpose radio frequency applications requiring stable gain and low noise characteristics in compact surface-mount packages.

Replacement Considerations

Consult NXP datasheets for direct pin-compatible alternatives within the BFG series. Verify electrical parameters such as VCEO, IC, and fT match the original requirements before substitution.