BFG94,115

Overview

The BFG94,115 is an NPN silicon RF bipolar transistor manufactured by NXP Semiconductors. Designed for high-frequency applications, it operates up to a maximum frequency of 10 GHz. The device features a collector-emitter breakdown voltage (VCEO) of 20 V and an emitter-base breakdown voltage (VEBO) of 3 V. It supports a continuous collector current of 100 mA with a power dissipation rating of 650 mW. Packaged in the SOT-223 surface-mount format, it functions as a single transistor suitable for environments ranging from -65°C to +150°C.

Feature Summary

• High-frequency operation capability up to 10 GHz
• Robust thermal performance with a maximum junction temperature of 150°C
• Surface-mount design utilizing the SOT-223 package

Applications

• RF amplification stages in communication systems
• High-frequency oscillator circuits
• Microwave signal processing modules

Procurement Notes

Verify the specific ordering code suffix against official NXP documentation to ensure correct packaging configuration. Confirm RoHS compliance status through the manufacturer's datasheet before integration. Check component lifecycle status to assess long-term availability risks for production planning.

Selection Notes

Select this component when a high-voltage NPN RF transistor is required for frequencies near 10 GHz. Ensure the circuit design accommodates the 650 mW power dissipation limit within the SOT-223 thermal constraints. Verify that the 20 V collector-emitter voltage exceeds the peak operating voltage of the target application.

Part Context

This part belongs to the NXP BFG series of silicon RF bipolar transistors. These components are engineered for microwave and radio frequency applications requiring high linearity and gain. The series provides standardized packages for easy integration into PCB layouts for wireless infrastructure and test equipment.

Replacement Considerations

Consult NXP technical support or authorized distributors for verified cross-reference data. Do not substitute without confirming pinout compatibility and electrical parameter equivalence.