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Product Detailed Parameters
- Description：RF TRANS NPN 15V 5.5GHZ SC-73
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5.5GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 70mA, 10V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SC-73
- Grade：-
- Qualification：-
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Overview
The BFG97,115 is an NPN planar epitaxial silicon transistor manufactured by NXP Semiconductors. It operates at frequencies up to 5 GHz and is housed in a plastic SOT-223 surface-mount envelope. The device features excellent output voltage capabilities with a collector-emitter breakdown voltage of 15 V and an emitter-base breakdown voltage of 2.5 V. Maximum continuous collector current is rated at 120 mA, with a power dissipation capability of 650 mW. It functions as a wideband transistor primarily intended for MATV applications.
Feature Summary
- NPN planar epitaxial construction in a plastic SOT-223 envelope
- Wideband operation capability up to 5 GHz
- Designed for high output voltage performance
Applications
- MATV (Master Antenna Television) systems
Procurement Notes
This component is listed as No Longer Manufactured or discontinued by the supplier. Historical specifications are available for reference only. Verification of current availability through authorized distributors is required before procurement planning. Ensure compatibility with legacy system designs when sourcing replacement units from secondary markets.
Selection Notes
Select this component for wideband RF amplification tasks within MATV infrastructure where a single NPN transistor in an SOT-223 package is suitable. Verify that the 15 V collector-emitter voltage and 120 mA current limits meet circuit requirements. Consider the PNP complement BFG31 if complementary pairing is necessary for the design.
Part Context
The BFG97 belongs to NXP's portfolio of RF bipolar transistors designed for general-purpose wideband applications. It serves as a discrete solution for signal processing in television distribution networks. The part is distinct from integrated RF amplifier ICs, offering standalone amplification functionality in a standard surface-mount package.
Replacement Considerations
The BFG31 is documented as the PNP complement to the BFG97. For direct substitution in existing circuits, verify pinout compatibility and thermal characteristics against other NPN wideband transistors in the SOT-223 package.
