BFP 182 E7764

$0.26

Description：RF TRANS NPN 12V 8GHZ SOT-143-3D
Series：-

SKU:26c1bd508e71 Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 8GHZ SOT-143-3D
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain：22dB
Power - Max：250mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 8V
Current - Collector (Ic) (Max)：35mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-253-4, TO-253AA
Supplier Device Package：PG-SOT-143-3D
Grade：-
Qualification：-

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BFP 182 E7764

Overview

The BFP182 is an NPN silicon RF transistor designed for low noise and high-gain broadband amplifiers. It operates with collector currents ranging from 1 mA to 20 mA. Key electrical parameters include a transition frequency (fT) of 8 GHz at 900 MHz, a minimum DC current gain (hFE) of 70, and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a total power dissipation of 250 mW and functions within an ambient temperature range of -65 °C to +150 °C. It is housed in a surface-mount SOT-143 package.

Feature Summary

Optimized for low noise and high-gain broadband amplifier applications
Qualified according to AEC-Q101 automotive standards
Features a Pb-free RoHS compliant package

Applications

Low noise amplifiers
High-gain broadband amplifiers

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging quantities and tape-and-reel specifications. Confirm that the component meets all required environmental compliance standards before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring an fT of 8 GHz and a noise figure as low as 0.9 dB at 900 MHz. Ensure the design accommodates the 12 V collector-emitter voltage limit and the 250 mW thermal dissipation capability under specified operating conditions.

Part Context

This part belongs to the BFP series of NPN silicon RF transistors manufactured by Infineon Technologies. It shares the SOT-143 package form factor with other devices in the lineup but offers distinct electrical characteristics tailored for specific RF amplification requirements.