SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFP405 is a low noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It features a minimum noise figure of 1.25 dB at 1.8 GHz and an outstanding Gms of 23 dB at the same frequency. The device operates with a collector-emitter voltage of 4.5 V, a collector current of 25 mA, and a total power dissipation of 75 mW. It utilizes a SOT-343 package and is qualified according to AEC-Q101 standards.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches project requirements. Check for AEC-Q101 qualification status if automotive compliance is mandatory. Ensure proper ESD handling precautions are observed during storage and assembly processes.
Select this component for designs requiring minimal noise figures in the 1.8 GHz range. Consider the 4.5 V collector-emitter voltage limit when defining supply rails. Evaluate the 75 mW power dissipation capability against thermal constraints. Verify that the SOT-343 package footprint aligns with the PCB layout specifications.
This part belongs to the BFP405 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for high-frequency applications where low noise and high gain are critical. The device is housed in a compact SOT-343 surface-mount package suitable for space-constrained designs.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF transistor families without electrical parameter validation.
The BFP405 is suitable for oscillator applications up to 12 GHz.
The minimum noise figure (NFmin) is 1.25 dB at 1.8 GHz.
Yes, a qualification report according to AEC-Q101 is available for this device.