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The BFP540F is an NPN silicon RF transistor designed for high-gain, low-noise amplifier applications at 1.8 GHz. It features a transition frequency of 30 GHz and a maximum available power gain of 20 dB at 1.8 GHz. The device operates with a collector-emitter voltage of 4.5 V and a continuous collector current of 80 mA. Key electrical characteristics include a noise figure of 0.9 dB at 1.8 GHz and a third-order intercept point of 24.5 dBm. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C.
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm reel specifications and packaging details. Confirm component authenticity through authorized channels as the datasheet indicates published information is not a guarantee of characteristics. Ensure handling precautions are observed due to electrostatic discharge sensitivity.
Select this component when designing circuits requiring a transition frequency up to 30 GHz and a noise figure as low as 0.9 dB at 1.8 GHz. Consider the TSFP-4 package constraints and the 250 mW power dissipation limit relative to thermal management requirements. Evaluate the 4.5 V collector-emitter voltage rating against system supply voltages.
This part belongs to the BFP540 series of NPN silicon RF transistors manufactured by Infineon Technologies. It utilizes the TSFP-4 package configuration with four pins. The product line targets RF applications where high reliability and specific gain-noise trade-offs are critical for system performance.
Public confirmed substitute part numbers are not provided in the verified source material. Consult official Infineon resources for potential cross-references or updated series replacements.