BFP 640 H6433

Overview

The BFP640 is an NPN Silicon Germanium RF transistor designed for high gain and low noise applications. It features a maximum collector-emitter voltage of 4 V, a collector current rating of 50 mA, and a total power dissipation of 200 mW. The device utilizes 70 GHz fT technology and offers a typical transition frequency of 40 GHz at 1 GHz. Key performance metrics include a minimum DC current gain (hFE) of 110 and a maximum stable gain of 24 dB at 1.8 GHz. Noise figures are specified as 0.65 dB at 1.8 GHz and 1.2 dB at 6 GHz. It is housed in a SOT343 package with four pins.

Feature Summary

• High gain and low noise characteristics suitable for wireless applications
• Gold metallization for enhanced reliability
• Qualified according to AEC-Q101 standards

Applications

• CDMA applications
• WLAN applications
• General wireless applications

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Ensure that the component meets all required environmental and automotive qualification standards before integration into final designs.

Selection Notes

Select this component for circuits requiring high-frequency operation up to 6 GHz with minimal signal degradation. Consider the low collector-emitter voltage limit when designing bias networks. Evaluate thermal constraints based on the 200 mW power dissipation rating under expected operating conditions.

Part Context

This part belongs to the BFP640 series of NPN Silicon Germanium RF transistors manufactured by Infineon Technologies. It is specifically engineered for radio frequency amplification tasks where low noise and high stability are critical requirements.

Replacement Considerations

Public confirmed substitute part numbers: BFP64FH6327XT, BFP640FH6327XTSA1.