BFP 650F E6327

Overview

The BFP 650F E6327 is an NPN Silicon Germanium RF transistor designed for medium power amplifiers and driver stages. It features a transition frequency of 42 GHz at 80 mA collector current and 3 V collector-emitter voltage. The device provides a maximum available gain of 21.5 dB at 1.8 GHz with a noise figure of 0.8 dB. It operates within a collector-emitter voltage range up to 4 V and supports a continuous collector current of 150 mA. Total power dissipation reaches 500 mW, and the component is qualified according to AEC-Q101 standards.

Feature Summary

• High linearity performance characterized by high OIP3 and P-1dB values
• Optimized for low phase noise oscillator applications
• Silicon Germanium technology enabling high-frequency operation

Applications

• Medium power amplifiers
• Driver stages
• Low phase noise oscillators

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and automotive qualification details directly from the manufacturer datasheet before procurement.

Selection Notes

Select this component for designs requiring high gain and low noise in the 1.8 GHz to 6 GHz range. Ensure biasing circuits support the specified 3 V operating voltage and 80 mA collector current for optimal AC characteristics.

Part Context

This part belongs to the BFP650 series of NPN silicon germanium RF transistors manufactured by Infineon Technologies. It utilizes TSFP-4 surface-mount packaging and is intended for high-frequency radio frequency circuit implementations.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. No alternative part numbers are confirmed in the provided source material.