BFP 720FESD E6327

Overview

The BFP 720FESD E6327 is an RF bipolar transistor manufactured by Infineon Technologies, utilizing Silicon-Germanium (SiGe) technology. It operates at a maximum frequency of 43 GHz with a collector-emitter voltage (VCEO) of 4.2 V and continuous collector current of 30 mA. The device features a power dissipation rating of 100 mW and functions within a temperature range of -55°C to +150°C. Packaged in the TSFP-4-1 surface-mount format, this component is designed for high-frequency applications.

Feature Summary

• Utilizes SiGe technology for enhanced RF performance
• Operates at frequencies up to 43 GHz
• Designed for surface-mount installation

Applications

• RF front-end modules
• Wireless communication systems
• High-frequency signal processing

Procurement Notes

This component is listed as End-of-Life (EOL). Verification of availability should be conducted through official manufacturer channels or authorized distributors. Check for discontinuation notifications dated March 21, 2025. Ensure compliance with RoHS standards before procurement.

Selection Notes

Select this part for applications requiring SiGe-based RF transistors with a 43 GHz cutoff frequency. Verify that the 4.2 V collector-emitter voltage and 30 mA current limits meet circuit requirements. Confirm compatibility with the TSFP-4-1 package footprint during PCB design.

Part Context

The BFP 720FESD E6327 belongs to the BFP720 series of RF bipolar transistors from Infineon. It shares similarities with other models like the BFP 720FESD H6327 but differs in specific ordering suffixes. This series is categorized under RF Bipolar Transistors and is distinct from general-purpose NPN transistors like the BFP 720ESD.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consider evaluating the BFP 720FESD H6327 or similar SiGe RF transistors from the same manufacturer family, subject to technical compatibility verification.