BFP182WH6327XTSA1

$0.17

Description：RF TRANS NPN 12V 8GHZ PG-SOT-343
Series：-

SKU:f063adb2bf18 Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 8GHZ PG-SOT-343
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain：22dB
Power - Max：250mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 8V
Current - Collector (Ic) (Max)：35mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：PG-SOT343-3D
Grade：-
Qualification：-

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BFP182WH6327XTSA1

Overview

The BFP182WH6327XTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates within a collector-emitter voltage (VCEO) of 12 V and supports a continuous collector current of 35 mA. The device features a minimum DC current gain (hFE) of 70 at 10 mA and 8 V. Packaged in a surface-mount SOT-343-4 configuration, it dissipates up to 250 mW. The component functions reliably across a temperature range from -65 °C to +150 °C.

Feature Summary

NPN silicon construction optimized for radio frequency applications
High thermal stability with operation up to 150 °C junction temperature
Compact surface-mount design suitable for space-constrained layouts

Applications

RF signal amplification circuits
General-purpose radio frequency switching
Communication equipment front-ends

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's certificate of conformity. Ensure the procurement channel provides valid traceability records for this discontinued or end-of-life component variant.

Selection Notes

Select this component when an NPN RF transistor with a 12 V breakdown voltage and 35 mA current limit is required. Verify that the SOT-343-4 footprint matches the PCB layout constraints. Ensure the application circuit can accommodate the specified 250 mW power dissipation without excessive thermal resistance.

Part Context

This part belongs to Infineon's portfolio of RF bipolar transistors designed for high-frequency performance. The BFP182 series utilizes silicon technology to deliver stable gain characteristics in compact packages. It serves as a specialized discrete solution for analog RF stages where low noise and moderate power handling are prioritized over high-voltage capabilities.