SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFP183E7764HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates with a transition frequency of 8 GHz and features a minimum noise figure of 0.9 dB at 900 MHz. The device supports collector currents from 2 mA to 30 mA for broadband amplification. Key electrical parameters include a maximum collector-emitter voltage of 12 V, a continuous collector current of 65 mA, and a total power dissipation of 250 mW. It utilizes an SOT-143 package and is qualified according to AEC-Q101 standards.
Verify component authenticity through authorized distribution channels. Confirm the specific ordering suffix matches project requirements. Check for the latest availability status as manufacturing schedules may change. Ensure proper ESD handling procedures are followed during storage and assembly. Review the official datasheet for detailed thermal management guidelines.
Select this component when designing circuits requiring low noise figures below 1 dB at 900 MHz. Consider the 8 GHz transition frequency for high-frequency signal integrity. Evaluate the 250 mW power dissipation limit against thermal constraints in the final enclosure. Verify that the SOT-143 footprint aligns with the PCB layout specifications.
This part belongs to the BFP183 series of low noise silicon bipolar RF transistors. It shares the same core die and electrical characteristics as other variants within the family, distinguished primarily by packaging and tape-and-reel configurations. The component is engineered for consistent performance in RF front-end modules.
Direct substitutes include BFP183E7764XTSA1 and BFP183E6327HTSA1. These alternatives share identical electrical specifications and pin configurations. Verify package compatibility before implementation.