SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFP193WH6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates in the SOT-343 package with four pins configured as emitter, collector, emitter, and base. The device supports a maximum collector-emitter voltage of 12 V and a continuous collector current of 80 mA. Key electrical parameters include a transition frequency (fT) of 8 GHz at 500 MHz, a minimum noise figure (NFmin) of 1 dB at 900 MHz, and a total power dissipation of 580 mW. DC current gain (hFE) ranges from 70 to 140.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the part matches the specific ordering code BFP193WH6327XTSA1. Check for AEC-Q101 qualification reports if automotive compliance is required. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.
Select this component when designing circuits requiring low noise figures around 900 MHz and high gain up to 2 GHz. Consider the 12 V collector-emitter voltage limit and 80 mA maximum collector current for biasing requirements. Evaluate thermal management needs based on the 580 mW power dissipation capability within the SOT-343 package constraints.
This component belongs to the BFP193 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. It utilizes standard silicon technology and is housed in an SOT-343 surface-mount package. The device is Pb-free and RoHS compliant, meeting environmental standards for electronic components.
Publicly confirmed substitute part numbers are not available in the provided documentation.