BFP193WH6327XTSA1

BFP193WH6327XTSA1

$0.14
  • Description:RF TRANS NPN 12V 8GHZ PG-SOT-343
  • Series:-

SKU:eb907a721373 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 12V 8GHZ PG-SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain:13.5dB ~ 20.5dB
  • Power - Max:580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Grade:-
  • Qualification:-

Download product information

BFP193WH6327XTSA1

Overview

The BFP193WH6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates in the SOT-343 package with four pins configured as emitter, collector, emitter, and base. The device supports a maximum collector-emitter voltage of 12 V and a continuous collector current of 80 mA. Key electrical parameters include a transition frequency (fT) of 8 GHz at 500 MHz, a minimum noise figure (NFmin) of 1 dB at 900 MHz, and a total power dissipation of 580 mW. DC current gain (hFE) ranges from 70 to 140.

Feature Summary

  • Designed for low noise and high-gain amplifier applications up to 2 GHz
  • Suitable for linear broadband amplifier implementations
  • Features a transition frequency of 8 GHz and a minimum noise figure of 1 dB at 900 MHz

Applications

  • Low noise amplifiers operating up to 2 GHz
  • High-gain amplifier circuits
  • Linear broadband amplifiers

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the part matches the specific ordering code BFP193WH6327XTSA1. Check for AEC-Q101 qualification reports if automotive compliance is required. Ensure proper ESD handling precautions are observed during storage and assembly due to device sensitivity.

Selection Notes

Select this component when designing circuits requiring low noise figures around 900 MHz and high gain up to 2 GHz. Consider the 12 V collector-emitter voltage limit and 80 mA maximum collector current for biasing requirements. Evaluate thermal management needs based on the 580 mW power dissipation capability within the SOT-343 package constraints.

Part Context

This component belongs to the BFP193 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. It utilizes standard silicon technology and is housed in an SOT-343 surface-mount package. The device is Pb-free and RoHS compliant, meeting environmental standards for electronic components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

BFP193WH6327XTSA1BFP193WH6327XTSA1
$0.14
Buy Now