BFP405E6433HTMA1

BFP405E6433HTMA1

$0.15
  • Description:RF TRANS NPN 5V 25GHZ SOT-343
  • Series:-

SKU:656bd99371db Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 25GHZ SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):1.25dB @ 1.8GHz
  • Gain:23dB
  • Power - Max:75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 4V
  • Current - Collector (Ic) (Max):25mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Grade:-
  • Qualification:-

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BFP405E6433HTMA1

Overview

The BFP405E6433HTMA1 is a low noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It features a minimum noise figure of 1.25 dB at 1.8 GHz and an outstanding gain of 23 dB at the same frequency. The device operates with a collector-emitter voltage of 4.5 V, a collector current of 25 mA, and a total power dissipation of 75 mW. It utilizes a SOT343 package and includes a SPICE Gummel Poon model for circuit simulation.

Feature Summary

  • Optimized for low current applications and high-frequency oscillator circuits
  • Provides exceptional noise performance with a minimum noise figure of 1.25 dB at 1.8 GHz
  • Delivers high small-signal gain suitable for radio frequency amplification tasks

Applications

  • Low noise amplifier stages in communication systems
  • Oscillator circuits operating up to 12 GHz
  • RF front-end modules requiring minimal signal degradation

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official documentation. Confirm that the ordering suffix matches the specific package and qualification requirements. Ensure handling precautions are followed due to electrostatic discharge sensitivity during installation.

Selection Notes

Select this component when designing circuits that require ultra-low noise figures at frequencies around 1.8 GHz. Consider the limited collector current and power dissipation capabilities when determining biasing conditions. Evaluate the transition frequency characteristics to ensure suitability for target operating bands up to 12 GHz.

Part Context

This part belongs to Infineon Technologies' portfolio of low noise silicon bipolar RF transistors. It is specifically engineered for applications demanding high linearity and minimal noise contribution in compact surface-mount packages. The device supports designs where space constraints and signal integrity are critical priorities.

Replacement Considerations

Consult the official datasheet for verified substitute part numbers. Ensure any replacement maintains equivalent noise figure, gain bandwidth product, and maximum voltage ratings to preserve circuit performance without modification.

BFP405E6433HTMA1BFP405E6433HTMA1
$0.15
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