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The BFP405E6740HTSA1 is a low noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It features a minimum noise figure of 1.25 dB at 1.8 GHz and an outstanding maximum stable gain of 23 dB at the same frequency. The device operates with a collector-emitter voltage of 4.5 V, a collector current of 25 mA, and a total power dissipation of 75 mW. Packaged in SOT-343 (SOT343), it supports surface mount installation and includes AEC-Q101 qualification.
Verify component authenticity by cross-referencing the manufacturer part number BFP405E6740HTSA1 with official Infineon documentation. Confirm package type matches SOT-343 specifications and check for AEC-Q101 qualification status. Ensure handling precautions are followed due to ESD sensitivity.
Select this component when designing circuits requiring minimal noise figures around 1.8 GHz with low bias currents. The device is suitable for applications demanding high stability and low power consumption within a compact SOT-343 footprint. Evaluate thermal constraints carefully as total power dissipation is limited to 75 mW.
This component belongs to the BFP405 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. The series is engineered for high-frequency performance in compact packages, supporting designs that require precise noise control and reliable operation in low-power RF environments.
Consult official Infineon resources for verified substitute part numbers. Do not assume functional equivalence with other models without verifying electrical parameters and pin configurations against the datasheet.
The BFP405 is designed for use in oscillator circuits operating up to 12 GHz.
The transition frequency (fT) is specified at 2 GHz, while the maximum stable gain (Gms) of 23 dB is measured at 1.8 GHz.
Yes, a qualification report according to AEC-Q101 is available for this component.