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The BFP405H6327XTSA1 is a low noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It features a minimum noise figure of 1.25 dB at 1.8 GHz and an outstanding Gms of 23 dB at the same frequency. The device operates with a collector-emitter voltage of 4.5 V, a maximum collector current of 25 mA, and a total power dissipation of 75 mW. It utilizes a SOT-343 package and meets AEC-Q101 qualification standards.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet before finalizing procurement orders.
Select this component when designing circuits requiring minimal noise figures at 1.8 GHz with low bias currents. Consider the 4.5 V collector-emitter breakdown voltage and 75 mW power dissipation limits during thermal management planning. Verify that the SOT-343 package dimensions fit the target PCB layout constraints.
This part belongs to the BFP405 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically engineered for high-frequency applications where signal integrity and low power consumption are critical design parameters.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF transistor families without validating electrical characteristics against the original specifications.
The transition frequency is typically 25 GHz when measured at IC = 10 mA, VCE = 3 V, and f = 2 GHz.
Yes, a qualification report according to AEC-Q101 is available for this component.
The typical DC current gain is 95, measured at IC = 5 mA and VCE = 4 V using pulse measurement.