SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BFP405H6740XTSA1 is a low noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It features a minimum noise figure of 1.25 dB at 1.8 GHz and an outstanding maximum stable gain of 23 dB at the same frequency. The device operates with a collector-emitter voltage of 4.5 V, a transition frequency of 25 GHz, and a total power dissipation of 75 mW. Packaged in SOT343, it is Pb-free, RoHS compliant, and halogen-free.
Verify component authenticity by cross-referencing the manufacturer's official datasheet and qualification reports. Confirm that the specific ordering suffix matches the required package and compliance standards. Ensure handling precautions are observed due to ESD sensitivity. Check for AEC-Q101 qualification availability if automotive or high-reliability standards are required for the intended deployment.
Select this component when designing circuits requiring minimal noise figures at 1.8 GHz and operation within low current constraints. Evaluate the thermal resistance characteristics against the expected ambient temperature range. Consider the SOT343 package dimensions for PCB layout compatibility. Verify that the 4.5 V collector-emitter voltage rating aligns with the system's supply requirements.
This part belongs to the BFP405 series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. The series is characterized by its suitability for low current applications and oscillator designs operating up to 12 GHz. The H6740XTSA1 suffix indicates specific packaging and manufacturing lot details consistent with Infineon's standard product coding.
Consult official replacement lists from Infineon Technologies. No public substitute part numbers are confirmed in the provided documentation.
The maximum stable gain is 23 dB at 1.8 GHz.
The transition frequency is 25 GHz at IC = 10 mA and VCE = 3 V.
A qualification report according to AEC-Q101 is available for this component.