BFP410H6327XTSA1

$0.35

Description：RF TRANS NPN 5V 25GHZ SOT-343
Series：-

SKU:a6d0967cbf8c Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 5V 25GHZ SOT-343
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：5V
Frequency - Transition：25GHz
Noise Figure (dB Typ @ f)：1.2dB @ 2GHz
Gain：21.5dB
Power - Max：150mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 13mA, 2V
Current - Collector (Ic) (Max)：40mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：PG-SOT343-4-2
Grade：-
Qualification：-

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BFP410H6327XTSA1

Overview

The BFP410H6327XTSA1 is an N-channel RF bipolar transistor manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 5V and a continuous collector current rating of 40mA. The device operates with a transition frequency of 25GHz and supports a power dissipation capacity of 150mW. It is housed in a PG-SOT343-4-2 surface-mount package, suitable for compact electronic designs requiring high-frequency performance.

Feature Summary

High-speed operation capability with a 25GHz transition frequency
Low-voltage design optimized for 5V collector-emitter breakdown limits
Compact surface-mount packaging for space-constrained applications

Applications

RF signal amplification circuits
Wireless communication transceivers
High-frequency switching applications

Procurement Notes

Verify component authenticity through authorized distributors to ensure compliance with Infineon specifications. Confirm package integrity upon receipt, as the SOT-343 form factor is sensitive to mechanical stress during handling. Cross-reference datasheet revisions to align with current manufacturing standards before integration into final assemblies.

Selection Notes

Select this component when circuit requirements demand a low-voltage NPN RF transistor with high transition frequencies. Ensure the design accommodates the 150mW thermal dissipation limit within the specified operating temperature range. Evaluate PCB layout constraints to match the PG-SOT343-4-2 footprint dimensions accurately.

Part Context

This part belongs to the BFP series of RF bipolar transistors from Infineon Technologies. It serves as a replacement for older discrete RF components in modern wireless infrastructure. The specific suffix indicates tape-and-reel packaging configuration for automated assembly processes.